EC-304 Electronic Devices Notes
5 notes for Electronic Devices, unit by unit.
Notes for EC-304
- Unit 1 · Short notes Semiconductor Material Properties Elemental & compound semiconductor materials · Bonding forces and energy bands in intrinsic and extrinsic silicon · Charge carriers in semiconductors · Carrier concentration · Junction properties · Equilibrium condition
- Unit 2 · Short notes Diode Circuits and Power Supply Ideal and practical diode · Clipper circuits · Clamper circuits · Power‑supply rectifiers – half‑wave, full‑wave, bridge rectifier · Filter circuits · Voltage regulation using shunt regulator circuits
- Unit 3 · Short notes Fundamentals of BJT BJT construction and basic operation · Current components and equations · Configurations: common‑base (CB), common‑emitter (CE), common‑collector (CC) · Input and output characteristics · Early effect · Regions of operation: active, cut‑off, saturation
- Unit 4 · Short notes Small Signal and Large Signal Analysis Small‑signal amplifier and bandwidth · Hybrid‑π model · h‑parameter analysis of transistor amplifier · Multistage amplifiers: cascading, boot‑strapping, Darlington, cascode · Coupling methods in multistage amplifiers · Low and high frequency response
- Unit 5 · Short notes FETs, UJT and Thyristors JFET construction, n‑channel and p‑channel, transfer and drain characteristics, parameters, equivalent model, voltage gain, analysis in CG, CS, CD configurations · Enhancement and depletion MOSFET drain and transfer characteristics · Unijunction transistor (UJT) principle of operation, characteristics, UJT relaxation oscillator · Thyristors (including SCR) operation principles
More for EC-304
Other 3rd semester ECE subjects
- BT-301 Mathematics-III
- EC-302 Electronic Measurements and Instrumentation
- EC-303 DIGITAL SYSTEM DESIGN
- EC-305 Network Analysis
- EC-306 EMI Lab