EC-304 RGPV B.Tech
Electronic Devices (ED)
Previous year papers and the official syllabus are free to read, no account needed.
Previous Year Papers
7 papers, latest Dec 2025
- EC-304 paper, Dec 2025
- EC-304 paper, Jun 2025
- EC-304 paper, Dec 2024
- EC-304 paper, Jun 2024
- EC-304 paper, Dec 2023
- EC-304 paper, Jun 2023
Syllabus, notes and important questions for EC-304
Syllabus units
Topics as the official RGPV syllabus lists them.
Unit 1 Semiconductor Material Properties 11 topics
- Elemental & compound semiconductor materials
- Bonding forces and energy bands in intrinsic and extrinsic silicon
- Charge carriers in semiconductors
- Carrier concentration
- Junction properties
- Equilibrium condition
- Biased junction
- Steady‑state condition
- Breakdown mechanism (rectifying diodes, Zener diodes)
- Metal‑semiconductor junction
- Special diodes: tunnel diodes, varactor diodes, Schottky diode, photodiodes, photodetector, LED, solar cell
Unit 2 Diode Circuits and Power Supply 8 topics
- Ideal and practical diode
- Clipper circuits
- Clamper circuits
- Power‑supply rectifiers – half‑wave, full‑wave, bridge rectifier
- Filter circuits
- Voltage regulation using shunt regulator circuits
- Voltage regulation using series regulator circuits
- Voltage regulation using ICs
Unit 3 Fundamentals of BJT 15 topics
- BJT construction and basic operation
- Current components and equations
- Configurations: common‑base (CB), common‑emitter (CE), common‑collector (CC)
- Input and output characteristics
- Early effect
- Regions of operation: active, cut‑off, saturation
- BJT as an amplifier
- Ebers‑Moll model
- Power dissipation in transistor (Pd, max rating)
- Phototransistor
- Transistor biasing circuits: fixed bias, self bias, voltage‑divider bias, collector‑to‑base bias
- Load‑line analysis (DC and AC)
- Operating point and bias stabilization
- Thermal runaway
- Transistor as a switch
Unit 4 Small Signal and Large Signal Analysis 8 topics
- Small‑signal amplifier and bandwidth
- Hybrid‑π model
- h‑parameter analysis of transistor amplifier
- Multistage amplifiers: cascading, boot‑strapping, Darlington, cascode
- Coupling methods in multistage amplifiers
- Low and high frequency response
- Current‑mirror circuits
- Large‑signal analysis and power amplifiers: Class A, B, AB, C, D, transformer‑coupled, push‑pull
Unit 5 FETs, UJT and Thyristors 4 topics
- JFET construction, n‑channel and p‑channel, transfer and drain characteristics, parameters, equivalent model, voltage gain, analysis in CG, CS, CD configurations
- Enhancement and depletion MOSFET drain and transfer characteristics
- Unijunction transistor (UJT) principle of operation, characteristics, UJT relaxation oscillator
- Thyristors (including SCR) operation principles
Exam insights
Counted from 7 past EC-304 papers.
Marks asked per paper, by unit
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Unit 1 Semiconductor Material Properties 28 marks
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Unit 2 Diode circuits 19 marks
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Unit 3 Fundamentals of BJT 23 marks
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Unit 4 Small Signal analysis & Power Amplifiers 20 marks
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Unit 5 FET construction & Special Devices 22 marks
Average marks of the questions from each unit in one paper. You answer only some of them, so the total is more than the paper’s maximum.
Asked again and again
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Explain tunnelling, construction, working, V-I characteristics and equivalent circuit of tunnel diode
Asked 6 times: 2024, 2023, 2020, 2019
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Explain the construction and working principle of operation of UJT including its equivalent circuit and V-I characteristics.
Asked 3 times: 2025, 2019
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Explain the working principle of clipper and clamper circuits with circuit diagrams.
Asked 3 times: 2025, 2023, 2020