Electronic Devices (EC-304) - Important Questions

Explain tunnelling, construction, working, V-I characteristics and equivalent circuit of tunnel diode.

Explain the breakdown mechanisms in a PN diode: Avalanche breakdown and Zener breakdown.

Describe the working of half-wave and full-wave / bridge rectifier circuits with diagrams and waveforms.

Explain the working principle of clipper and clamper circuits with circuit diagrams.

What is biasing, what is the need of biasing, and what are the different biasing techniques for BJT?

For a CE NPN transistor with given VCC, VBB, IC, VCE, VBE, find beta and base resistor RB.

Derive the analysis of a common-emitter transistor amplifier using h-parameters (voltage gain, current gain, input and output impedance).

Describe / explain class A and class B power amplifiers with neat diagram.

Explain the construction and working of JFET with neat diagram, including transfer and drain characteristics.

Explain the construction and working principle of operation of UJT including its equivalent circuit and V-I characteristics.

Draw and explain the input and output characteristics of a transistor in common-emitter (CE) configuration, indicating the cutoff, active and saturation regions.

Explain the Darlington amplifier circuit with diagram and list its applications.

Explain the working of bridge rectifier and derive expressions for RMS current, PIV, ripple factor and efficiency.

Derive the voltage gain expression for a common-source (CS) MOSFET amplifier using the small-signal hybrid-pi model at low frequencies.

Write short notes on any two of the following: i) Schottky diode ii) LED and solar cell iii) Varactor diode.